Structural properties of GaAs on (001) oriented Si and Ge substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338192
Reference17 articles.
1. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
2. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
3. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
4. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
5. Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors andN‐metal‐oxide‐semiconductor silicon circuits
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