Radiation damage and near edge optical properties of nitrogen implanted gallium arsenide-Reference-Cited by-同舟云学术

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Radiation damage and near edge optical properties of nitrogen implanted gallium arsenide

Published:1982-03-16 Issue:1 Volume:70 Page:243-248
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Wesch W.,Wilk E.,Hehl K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Ion Implantation in Semiconductors and Other Materials, Ed. Plenum Press, New York 1973 (p. 39)

2. Optical properties of oxygen-implanted GaAs

3. Measurements of layer thicknesses and refractive indices in high‐energy ion‐implanted GaAs and GaP

4. Ion Implantation in Semiconductors and Other Materials, Ed. Plenum Press, New York 1973 (p. 39).

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ar+ Ion Implantation Induced Surface, Structural and Optical Modifications in Cadmium Selenide Thin Films;Journal of Electronic Materials;2018-07-02

2. Nitrogen ion implantation effects on the structural, optical and electrical properties of CdSe thin film;Journal of Materials Science: Materials in Electronics;2018-05-29

3. Dielectric Function of Native Oxide on Ion-Implanted GaAs;Acta Physica Polonica A;2013-05

4. Modification of AmBv Semiconductor Layers by Ion Implantation;MRS Proceedings;1993

5. Proton Beam Modification of Selected AIIIBVCompounds;Physica Status Solidi (a);1991-03-16

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