Measurements of layer thicknesses and refractive indices in high‐energy ion‐implanted GaAs and GaP-Reference-Cited by-同舟云学术

Measurements of layer thicknesses and refractive indices in high‐energy ion‐implanted GaAs and GaP

Author:

Kachare A. H.¹,Spitzer W. G.¹,Fredrickson J. E.²,Euler F. K.³

Affiliation:

1. Physics and Materials Science Departments, University of Southern California, Los Angeles, California 90007

2. Physics‐Astronomy Department, California State University‐Long Beach, Long Beach, California 90840

3. Air Force, Rome Air Development Center, Deputy for Electronic Technology, Hanscom Air Force Base, Massachusetts 01731

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

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2. A. H. Kachare, J. M. Cherlow, T. T. Yang, W. G. Spitzer, and F. K. Euler, J. Appl. Phys. 47, 161 (1976).JAPIAU0021-8979

3. A. H. Kachare, W. G. Spitzer, A. Kahan, F. K. Euler, and T. A. Whatley, J. Appl. Phys. 44, 4393 (1973).JAPIAU0021-8979

4. L. H. Skolnik, W. G. Spitzer, A. Kahan, F. Euler, and R. G. Hunsberger, J. Appl. Phys. 43, 2146 (1972).JAPIAU0021-8979

5. S. H. Wemple, J. C. North, and J. M. Dishman, J. Appl. Phys. 45, 1578 (1974).JAPIAU0021-8979

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3. Chapter 2 Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997