High energy implantation of 10B and 11B into (100) silicon in channel and in random direction
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
2. Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope10B in Si
3. Comparison of range and range straggling of implanted10B and11B in silicon
4. Low energy range distributions of 10B and 11B in amorphous and crystalline silicon
5. Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry
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2. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au–Si Schottky junctions;Journal of Physics D: Applied Physics;2006-03-17
3. Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si;Journal of Applied Physics;1997-12-15
4. Electronic stopping power ofB10in Si in random and 〈100〉 channeling directions;Physical Review B;1997-05-15
5. Electronic stopping power of 10B channeled into the Si 〈100〉 axial direction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
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