Electronic stopping power ofB10in Si in random and 〈100〉 channeling directions

Author:

dos Santos J. H. R.,Behar M.,Grande P. L.,Boudinov H.,Stoll R.,Klatt Chr.,Kalbitzer S.

Publisher

American Physical Society (APS)

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Stopping power for 4.8–6.8 MeV C ions along [1 1 0] and [1 1 1] directions in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-06

2. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation;Current Opinion in Solid State and Materials Science;2017-12

3. The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09

4. Highly accurate nuclear and electronic stopping cross sections derived using Monte Carlo simulations to reproduce measured range data;Journal of Applied Physics;2017-03-14

5. Stopping power of 11B in Si and TiO2 measured with a bulk sample method and Bayesian inference data analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06

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