Electronic stopping power ofB10in Si in random and 〈100〉 channeling directions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13651/fulltext
Reference27 articles.
1. Electronic stopping power of 〈100〉 axial-channelled He ions in Si crystals
2. Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction
3. Channeling of medium-mass ions through silicon
4. Axial channeling of boron ions into silicon
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2. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation;Current Opinion in Solid State and Materials Science;2017-12
3. The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
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5. Stopping power of 11B in Si and TiO2 measured with a bulk sample method and Bayesian inference data analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
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