Depth profiles of secondary defects of As+ and BF2+ implanted silicon measured by a thermal wave technique-Reference-Cited by-同舟云学术

Depth profiles of secondary defects of As+ and BF2+ implanted silicon measured by a thermal wave technique

Published:1989-02 Issue: Volume:37-38 Page:317-320
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ishikawa Katsuya,Yoshida Masakatsu,Inoue Mono

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Proc. 13th Int. Conf. on Defects in Semiconductor;Cerofolini,1985

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1. Defect engineering of p+-junctions by multiple-species ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

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