The effect of implant species on defect anneal kinetics part II: Arsenic and germanium implantation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The effect of implant species on defect anneal kinetics part II: Arsenic and germanium implantation

Published:1987-01 Issue:1-4 Volume:21 Page:499-502
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Jones Kevin S.,Prussin S.,Weber E.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. The nature of defect layer formation for arsenic ion implantation

2. Materials Issues in Silicon Integrated Circuit Processing;Prussin,1986

3. Semiconductor Silicon;Cerofolini,1986

4. Transient Thermal Processing;Pennycook,1986

5. Ion Implantation Science and Technology;Mader,1984

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopants in Semiconductors Studied by Perturbed Angular Correlation;Acta Physica Polonica A;2001-11

2. A Point Defect Based Two‐Dimensional Model of the Evolution of Dislocation Loops in Silicon during Oxidation;Journal of The Electrochemical Society;1994-03-01

3. Codiffusion of arsenic and phosphorus implanted in silicon;Journal of Applied Physics;1993-10-15

4. Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon;MRS Proceedings;1993

5. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP