Defect engineering of p+-junctions by multiple-species ion implantation-Reference-Cited by-同舟云学术

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Defect engineering of p+-junctions by multiple-species ion implantation

Published:1993-04 Issue:1-2 Volume:74 Page:175-180
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Current M.I.,Inoue M.,Nakashima S.,Ohno N.,Kuribara M.,Matsunaga Y.,Hara T.,Wagner D.,Leung S.,Adibi B.,Lecouras G.,Larson L.A.,Prussin S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. Custom profiles by automated multi-step implantation

2. The Role of Fluorine in Implanted Amorphous Silicon

3. Advanced Processing of Semiconductor Devices;Holland,1987

4. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si

5. Detection of defect structures in arsenic ion‐implanted silicon by fluorine decoration

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2. O2 atmospheric annealing-tunable defects in ionic oxide MgO nanoribbons;Applied Physics Letters;2019-05-20

3. Defect engineering in semiconducting oxides: Control of ZnO surface potential via temperature and oxygen pressure;AIChE Journal;2015-09-21

4. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+–n silicon junction;Ultramicroscopy;2008-05

5. Control of Defect Concentrations within a Semiconductor through Adsorption;Physical Review Letters;2006-08-02

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