Influence of thermal history on the residual disorder in implanted <111> silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608237443
Reference14 articles.
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3. Davidson, S. M. and Booker, G. R. 1971.Ion Implantation, Edited by: Eisen, F. H. 51Gordon and Breach.
4. On the annealing of damage produced by copper ion implantation of silicon single crystals
5. Mayer, J. W., Eriksson, L. and Davies, J. A. 1970.Ion Implantation in Semiconductors, 115Academic Press.
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