Damage analysis and engineering for ion implantation in ULSI process-Reference-Cited by-同舟云学术

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Damage analysis and engineering for ion implantation in ULSI process

Published:1993-04 Issue:1-2 Volume:74 Page:7-10
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Morio Inoue ,Shinji Fujii ,Genshu Fuse

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. A systematic analysis of defects in ion-implanted silicon

2. The Stopping and Range in Solids;Ziegler,1985

3. Ion implant monitoring with thermal wave technology

4. Depth profiles of secondary defects of As+ and BF2+ implanted silicon measured by a thermal wave technique

5. Anodic Formation of Oxide Films on Silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers;Journal of The Electrochemical Society;2005

2. Defect engineering of p+-junctions by multiple-species ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

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