EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. EPR and RBS study of defects produced by MeV ion implantation into silicon
2. Electron paramagnetic resonance of the lattice damage in oxygen‐implanted silicon
3. EPR studies of point defect and amorphous phase production during ion implantation in Silicon
4. X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1–2.2 MeV B ions implanted in silicon
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1. Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis andab-initiosimulations;Journal of Applied Physics;2013-04-21
2. Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon;Journal of Physics: Condensed Matter;2005-05-20
3. Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
4. Channeling characterization of defects in silicon: an atomistic approach;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
5. EPR study of defects produced by MeV Ag ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05
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