Author:
Sobolev N. A.,Götz G.,Karthe W.,Schnabel B.
Cited by
19 articles.
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1. Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon;Journal of Physics: Condensed Matter;2005-05-20
2. EPR study of defects produced by MeV Ag ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05
3. A comparative EPR study of ion implantation induced damage in Si, Si1−xGex (x ≠ 0) and SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
4. EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
5. EPR and RBS study of defects produced by MeV ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01