Electron paramagnetic resonance of the lattice damage in oxygen‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661743
Reference29 articles.
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3. Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects
4. Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
5. Concentration dependent spin-lattice relaxation in n-type silicon
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1. Local magnetic order in silicon implanted with high-energy ions;JETP Letters;2007-01
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4. EPR study of defects produced by MeV Ag ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05
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