Ionization, thermal, and flux dependences of implantation disorder in silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108231103
Reference51 articles.
1. Low temperature channeling measurements of ion implantation lattice disorder in single crystal silicon
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4. The energy dependence and depth distribution of lattice disorder in ion-implanted silicon
5. DEPTH DISTRIBUTION OF DIVACANCIES IN 400‐keV O+ION‐IMPLANTED SILICON
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