DEPTH DISTRIBUTION OF DIVACANCIES IN 400‐keV O+ION‐IMPLANTED SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653113
Reference23 articles.
1. Radiotracer Studies of Ion Implanted Profile Build-Up in Silicon Substrates
2. Radiotracer Studies of Ion Implanted Profile Build-Up in Silicon Substrates
3. Impurity distribution profiles in ion-implanted silicon
4. Impurity distribution profiles in ion-implanted silicon
5. Impurity distribution profiles in ion-implanted silicon
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1. Optimization of measurement parameters in Doppler broadening spectroscopy;Applied Surface Science;2002-06
2. Surface morphology and optical properties of MeV-energy heavy-ion irradiated crystalline Si and crystalline Ge: Possibility of formation of porous material;Philosophical Magazine B;1996-12
3. Characterization of defects in self‐ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy;Journal of Applied Physics;1996-06-15
4. Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-12
5. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08
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