The Energy Dependence of Lattice Disorder in Ion-Implanted Silicon

Author:

Marsden D. A.,Bellavance G. R.,Davies J. A.,Martini M.,Sigmund P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si;EPL (Europhysics Letters);2014-11-01

2. Ultra shallow doping profiling with SIMS;Reports on Progress in Physics;1995-10-01

3. Evolution of ion beam damage in solids, and the fractal concept;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986

4. BIBLIOGRAPHY;Materials Analysis by Ion Channeling;1982

5. High density cascade effects;Radiation Effects;1981-01

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