Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C

Author:

Eriksson L.,Bellavance G. R.,Davies J. A.

Publisher

Informa UK Limited

Subject

General Engineering

Reference10 articles.

1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

3. Eriksson, L., Davies, J. A. and Mayer, J. W. Proc Sante Fe Conf. on Radiation Effects in Semiconductors. pp.398Plenum Press.

4. Sigmund, P. and Sanders, J. B. Proc. Int. Conf. on Applications of Ion Beams to Semiconductor Technology. pp.218Editions Ophrys.

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1. Coherent precipitate formation in Tl implanted Si;Nuclear Instruments and Methods in Physics Research;1983-05

2. Coherent Precipitate Formation In Pulsed-Laser And Thermally-Annealed, Ion-Implanted Si.*;MRS Proceedings;1982

3. Basic Implantation Processes;Site Characterization and Aggregation of Implanted Atoms in Materials;1980

4. Lattice location of lead implanted into silicon at room temperature;Applied Physics;1977-08

5. Dose dependence of the substitutional fraction of Xe implanted in Fe;Hyperfine Interactions;1975-06

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