EPR and RBS study of defects produced by MeV ion implantation into silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation
2. High energy Au-implantation into silicon: Radiation damage and microscopical distribution of implanted atoms
3. New model for damage accumulation in Si during self‐ion irradiation
4. MeV, self‐ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior
5. Damage nucleation and annealing in MeV ion‐implanted Si
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. EPR and photoacoustic studies on 30kev H+ ion-implanted n-GaAs;Journal of Luminescence;2007-05
2. Enhancement of paramagnetic defects in yttria stabilized zirconia implanted by Cs ion irradiation;Journal of Alloys and Compounds;2007-02
3. Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon;Journal of Physics: Condensed Matter;2005-05-20
4. EPR study of defects produced by MeV Ag ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05
5. Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry;Journal of Applied Physics;2001-07-15
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