Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. High energy ion implantation
2. Complex-refractive-index profiles of 4 MeV Ge ion-irradiation damage in silicon
3. Spatial correlation between primary and secondary defect profiles after high dose self-irradiation of Si crystals
4. Anomalous defect interaction and amorphization during self-irradiation of Si crystals at 450 K
5. The optical properties of SiOxformed by high-dose Si ion implantation into fused silica
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