Formation of unstrained Si1−xGex. layers by high-dose 74Ge ion implantation in SIMOX
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. 50 GHz Si1 − xGex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy
3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
5. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
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1. SiGe Synthesis by Ge Ion Implantation;Japanese Journal of Applied Physics;2012-09-20
2. SiGe Synthesis by Ge Ion Implantation;Japanese Journal of Applied Physics;2012-09-01
3. Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates;Journal of Applied Physics;2002-10-15
4. Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
5. Strain Relaxation of He+ Implanted, Pseudomorphic Si1−xGex Layers on Si(100);MRS Proceedings;2001
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