Author:
Holländer B.,Lenk St.,Mantl S.,Trinkaus H.,Kirch D.,Luysberg M.,Hackbarth T.,Herzog H.-J.,Fichtner P.F.P.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. High-mobility Si and Ge structures
2. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
3. Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications
4. M. Zeuner, T. Hackbarth, U. König, A. Gruhle, F. Aniel, 57th Annual Development Research Conference Digest, University of California, Santa Barbara, USA, IEEE 99TH 8393, 1999, p. 177
5. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Cited by
66 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献