Self-annealing in ion-implanted Si and GaAs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference28 articles.
1. Damaged and reconstructed regions in silicon after heavy arsenic implantation
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4. Self‐annealing of ion‐implanted silicon: First experimental results
5. Damage recovery and dopant activation phenomena in heavily arsenic-implanted silicon
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2. Evolution of Fe-rich precipitates in Fe implanted Ge(1 1 0) surfaces as observed by scanning Auger microscopy;Applied Surface Science;2001-12
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4. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
5. RBS, RHEED and THEED studies of SIMOX and SIMNI structures formed by ion beam synthesis;Vacuum;1993-11
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