Self‐annealing of ion‐implanted silicon: First experimental results
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92139
Reference6 articles.
1. Self annealing of ion implanted silicon: suggestion for an experiment
2. Characterisation of multiple-scan electron beam annealing method
3. Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
4. The nature of rod-like defects observed in boron irradiated silicon
5. Ion beam annealing of semiconductors
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