Author:
Cerofolini G.F.,Manini P.,Meda L.,Pignatel G.U.,Queirolo G.,Garulli A.,Landi E.,Solmi S.,Nava F.,Ottaviani G.,Gallorini M.
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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1. Self-annealing in ion-implanted Si and GaAs;Vacuum;1991-01
2. A comparison of batch and single wafer high dose arsenic ion implantation techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-04
3. Self-Annealing in Ion-Implaned Silicon;Physica Status Solidi (a);1989-03-16
4. Silicon Phases;Physical Chemistry of, in and on Silicon;1989
5. Solution chemistry in silicon;International Reviews in Physical Chemistry;1988-04