Damaged and reconstructed regions in silicon after heavy arsenic implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333768
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1. Auger analysis of high-dose ion-implantation of arsenic in silicon;Journal of Physics: Conference Series;2012-03-29
2. Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation;Applied Physics Express;2010-07-09
3. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31
4. Chapter 5 Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors;Semiconductors and Semimetals;1997
5. Radiation Damage;Ion Implantation: Basics to Device Fabrication;1995
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