Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=7/a=071303/pdf
Reference19 articles.
1. Germanium channel MOSFETs: Opportunities and challenges
2. High performance germanium MOSFETs
3. Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
4. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation
5. Point defects and dopant diffusion in silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography;Journal of Applied Physics;2013-01-14
2. Self-diffusion in compressively strained Ge;Journal of Applied Physics;2011-08
3. Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation;Journal of Applied Physics;2011-06-15
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