Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773675
Reference29 articles.
1. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
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3. Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
4. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
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