Use of X-ray irradiation for annealing of radiation defects introduced by ion implantation in Si–SiO2 structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Influence of Ro radiation upon ion-implanted MOS structures
2. Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation
3. Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors
4. The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient
5. Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure;Technical Physics;2009-02
2. Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures;Applied Physics A: Materials Science & Processing;2004-03-01
3. Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures;Materials Science and Engineering: B;2002-09
4. X-ray irradiation of ion-implanted MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-10
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