The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient-Reference-Cited by-同舟云学术

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The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient

Published:1988-07 Issue:3 Volume:46 Page:221-227
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Hwu Jenn-Gwo,Fu Shyh-Liang

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00939267.pdf

Reference20 articles.

1. E.H. Nicollian, J.R. Brews:MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York 1982)

2. G.F. Derbenwick, B.L. Gregory: IEEE Trans. NS-22, 2151 (1975)

3. A.G. Revesz: IEEE Trans. NS-24, 2102 (1977)

4. Z. Shanfield, M.M. Moriwaki: IEEE Trans. NS-31, 1242 (1984)

5. Z. Shanfield, M.M. Moriwaki: IEEE Trans. NS-32, 3929 (1985)

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1. Use of X-ray irradiation for annealing of radiation defects introduced by ion implantation in Si–SiO2 structures;Solid-State Electronics;1998-10

2. Improving the radiation hardness of MOS structures;International Journal of Electronics;1994-05

3. Radiation-hardened metal-oxide-semiconductor structure;Philosophical Magazine Letters;1994-04

4. Reduction of the radiation sensitivity of MOS structures by irradiation-anneal cycle treatment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-05

5. Role of stress in irradiation‐then‐anneal technique used for improving radiation hardness of metal‐insulator‐semiconductor devices;Applied Physics Letters;1992-08-10

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