Role of stress in irradiation‐then‐anneal technique used for improving radiation hardness of metal‐insulator‐semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107819
Reference14 articles.
1. A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
2. Thermal nitridation of Si and SiO2for VLSI
3. A true single-transistor oxide-nitride-oxide EEPROM device
4. Hole and electron current transport in metal-oxide-nitride-oxide-silicon memory structures
5. Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Oxide Traps, Border Traps, and Interface Traps in SiO2;Defects in Microelectronic Materials and Devices;2008-11-19
2. Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures;Applied Physics A: Materials Science & Processing;2004-03-01
3. Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices;IEEE Transactions on Nuclear Science;2002-12
4. Thermally stimulated current in SiO2;Microelectronics Reliability;1999-09
5. Use of X-ray irradiation for annealing of radiation defects introduced by ion implantation in Si–SiO2 structures;Solid-State Electronics;1998-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3