Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures
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Published:2004-03-01
Issue:4
Volume:78
Page:607-610
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ISSN:0947-8396
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Container-title:Applied Physics A: Materials Science & Processing
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language:
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Short-container-title:Applied Physics A: Materials Science & Processing
Author:
Kaschieva S.,Dmitriev S.N.,Skorupa W.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry