Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109118
Reference4 articles.
1. A reliable approach to charge-pumping measurements in MOS transistors
2. Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping
3. rf annealing mechanisms in metal-oxide-semiconductor structures—an experimental simulation
4. Time evolution of capture cross sections of radiation‐induced Si/SiO2interface traps studied by single‐frequency ac conductance technique
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