rf annealing mechanisms in metal-oxide-semiconductor structures—an experimental simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. Low pressure rf annealing: A new technique to remove charge centers in MIS dielectrics
2. Removal of radiation‐induced electron traps in MOS structures by rf annealing
3. The effect of RF annealing upon electron-beam irradiated MIS structures
4. Recombination enhanced defect reactions
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