Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference2 articles.
1. Theory of transient emission current in MOS devices and the direct determination interface trap parameters
2. High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping Levels
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