Author:
Wu Y.-F.,Keller B.P.,Keller S.,Kapolnek D.,Kozodoy P.,Denbaars S.P.,Mishra U.K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Proc. IEEE Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits;Moore,1995
2. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
3. Late News, 54th Annual Dev. Res. Conf.;Fan,1996
4. Theoretical study of electron transport in gallium nitride
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