Investigation of bias stress degradation of Depletion-Mode (D-Mode) AlGaN/GaN HEMT
Author:
Affiliation:
1. Guilin University of Technology,College of Mechanical and Control Engineering,Guilin,China
2. CEPREI,Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873497.pdf?arnumber=9873497
Reference14 articles.
1. Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
2. Effect of gate-source access region stress on current collapse in AlGaN∕GaN HFETs
3. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
4. Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment
5. Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
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