Author:
Brunel L.,Lambert B.,Mezenge P.,Bataille J.,Floriot D.,Grünenpütt J.,Blanck H.,Carisetti D.,Gourdel Y.,Malbert N.,Curutchet A.,Labat N.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. New qualified industrial AlGaN/GaN HEMT process: power performances & reliability figures of merit;Floriot;EuMWC,2012
2. Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification;Lambert;Microelectron Reliab,2012
3. GaN HEMT reliability;del Alamo;Microelectron Reliab,2009
4. IV, noise and electroluminescence analysis of stress-induced percolation path in AlGaN/GaN high electron mobility transistors;Marko;Microelectron Reliab,2012
5. Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop;Marcon;Microelectron Reliab,2012
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