The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique-Reference-Cited by-同舟云学术

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Published:2022-10 Issue:10 Volume:69 Page:5496-5502
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Jiarui¹^ORCID,Su Yuanzhang²,Pan Chaowu¹,Kuang Weizhe¹,Yang Kai¹,Wang Haochen¹^ORCID,Wang Maojun³^ORCID,Zhang Bo¹^ORCID,Zhou Qi¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, China

3. School of Integrated Circuits, Peking University, Beijing, China

Funder

National Natural Science Foundation of China

Guangdong Basic and Applied Basic Research Foundation, China

Zhuhai Industry-University Research Cooperation Project

Sichuan Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09874809.pdf?arnumber=9874809

Reference29 articles.

1. Fast temperature sensing for GaN power devices using E-field probes

2. Thermal performance analysis of GaN-based high-power converters;avila;Proc 20th Eur Conf Power Electron Appl (EPE ECCE Europe),2018

3. PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

4. Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

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