Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6588698/6599115/06599162.pdf?arnumber=6599162
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side;Electronics;2024-02-04
2. Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure;Micromachines;2023-09-26
3. Investigation of bias stress degradation of Depletion-Mode (D-Mode) AlGaN/GaN HEMT;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10
4. Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs;Journal of Physics D: Applied Physics;2022-06-20
5. Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs;Materials Science in Semiconductor Processing;2022-01
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