Evaluation of the Reliability of a X-band Low-Noise Amplifier at Different Ambient Temperatures-Reference-Cited by-同舟云学术

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Evaluation of the Reliability of a X-band Low-Noise Amplifier at Different Ambient Temperatures

Published:2022-06-30 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Luzhaitsev Danila A.¹,Turov Artyom O.¹,Miller Yuri A.¹,Hohol Dmitry S.²,Luzhaitseva Elina O.³

Affiliation:

1. Tomsk State University of Control System and Radioelectronics,dept. of Physical Electronics,Tomsk,Russia

2. Research Institute of Electrical Communication Systems Tomsk State University of Control System and Radioelectronics,Tomsk,Russia

3. Tomsk State Pedagocial University,dept. of Phylological,Tomsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855116.pdf?arnumber=9855116

Reference10 articles.

1. High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

2. Thermal resistance calculation of AlGaN-GaN devices

3. Method for Estimating the Mean Tme To Failures of an Integral Microelectronics product;luzhaytsev;Proceedings of the reports of the II Interregional Scientific Conference “Industrial Revolution 4 0 the view of youth Abstracts”,2020

4. Precise Technique Finds FET Thermal Resistance;cooke;Microwave,1986

5. Accurate determination of thermal resistance of FETs

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