Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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4. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET’s;Yano;IEEE Trans. Electron Dev.,1999
5. Influence of the post-oxidation process on the MOS interface and MOSFETs properties;Suzuki;Mater. Sci. Forum,2001
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3. Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations;Thin Solid Films;2014-11
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