Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
Author:
Affiliation:
1. UPR Ultra-Low-Loss Power Device Technology Research Body
2. Electrotechnical Laboratory
3. National Institute of Advanced Industrial Science and Technology (AIST)
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.353-356.643.pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour;Microelectronics International;2013-12-20
2. Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature;Applied Surface Science;2013-11
3. Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures;ECS Journal of Solid State Science and Technology;2013
4. Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide;Japanese Journal of Applied Physics;2009-04-20
5. Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility;Materials Science Forum;2006-10
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