Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate
Author:
Funder
National Nature Science Foundation of China
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
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4. 3 kV 4H-SiC thyristors for pulsed power applications;Elasser;Mater. Sci. Forum.,2010
5. Injection modulation of p+-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base;Wang;Chin. Phys. B.,2017
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