Affiliation:
1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
2. Xi’an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi’an 710048, China
Abstract
In this paper, the performance of silicon carbide (SiC) light-triggered thyristor (LTT) with a p-type NiO emitter region is analyzed through numerical simulation. The conductivity modulation in SiC LTT is significantly enhanced with the help of high injection efficiency of holes in NiO/SiC heterojunction. The injected hole density at the surface of the p− long base is increased by ∼21.2 times and the corresponding specific on-state resistance ( Ron,sp) is only 36.7 mΩ cm2, which is reduced by about 29%. Moreover, hole-injection enhancement by NiO/SiC heterojunction also exhibits excellent potential in improving the dynamic characteristics of SiC LTTs. The simulation results indicate that the turn-on time of SiC LTT can be reduced by ∼57.76% when triggered by 1.0 W/cm2 ultraviolet light. Furthermore, energy dissipations of SiC LTT during the turn-on and turn-off processes can be reduced by 91.4% and 21.9%, respectively.
Funder
National Natural Science Foundation of China
Natural Science Basic Research Plan in Shaanxi Province of China
Scientific Research Project of Educaion Department of Shaanxi Province of China
Youth Talent Lift Project of Xi’an Science and Technology Association
Innovation Team Support Program of Shaanxi Province of China
Subject
General Physics and Astronomy