A Novel Heterotype SiC Superjunction MOSFET With Improved Both Forward and Reverse Performance
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China,610054
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963437.pdf?arnumber=9963437
Reference10 articles.
1. Superjunction Power Devices, History, Development, and Future Prospects
2. A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique
3. 4H-SiC Super-Junction JFET: Design and Experimental Demonstration
4. Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices
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1. A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
2. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18
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