A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance-Reference-Cited by-同舟云学术

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A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance

Published:2023-10-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 15th International Conference on ASIC (ASICON)
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Author:

Ai Zhaoyu¹,Liu Haiyun¹,Chen Xinyang¹,Feng Jing¹,Zhou Yuxi¹,Kong Moufu¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices of China,Chengdu,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10395907/10395930/10396551.pdf?arnumber=10396551

Reference14 articles.

1. Review of Silicon Carbide Processing for Power MOSFET

2. High-voltage accumulation-layer UMOSFET's in 4H-SiC

3. High performance SiC trench devices with ultra-low ron

4. 4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

5. 0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric;Microelectronics Journal;2024-09

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