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Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

  • Published:2017-02-13 Issue:4S Volume:56 Page:04CR05
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Kosugi Ryoji,Ji Shiyang,Mochizuki Kazuhiro,Kouketsu Hidenori,Kawada Yasuyuki,Fujisawa Hiroyuki,Kojima Kazutoshi,Yonezawa Yoshiyuki,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Junction Technology on SiC Power Devices;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08

2. 4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor;Journal of Crystal Growth;2023-04

3. Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001);Japanese Journal of Applied Physics;2022-11-01

4. A Novel Heterotype SiC Superjunction MOSFET With Improved Both Forward and Reverse Performance;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

5. Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
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