Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices-Reference-Cited by-同舟云学术

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Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Published:2017-02-13 Issue:4S Volume:56 Page:04CR05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kosugi Ryoji,Ji Shiyang,Mochizuki Kazuhiro,Kouketsu Hidenori,Kawada Yasuyuki,Fujisawa Hiroyuki,Kojima Kazutoshi,Yonezawa Yoshiyuki,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CR05/pdf

Reference30 articles.

1. Theory of Semiconductor Superjunction Devices

2. YFET - Trench superjunction process window extended

3. Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology

4. 600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride;Advanced Materials Interfaces;2024-09-06

2. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08

3. Epitaxial trench refill of 4H-SiC by chlorinated chemistry;Applied Physics Letters;2024-05-06

4. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

5. Junction Technology on SiC Power Devices;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08

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