600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure-Reference-Cited by-同舟云学术

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600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 20th International Symposium on Power Semiconductor Devices and IC's
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Author:

Sakakibara Jun,Noda Yoshitaka,Shibata Takumi,Nogami Shoji,Yamaoka Tomonori,Yamaguchi Hitoshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4534810/4538873/04538958.pdf?arnumber=4538958

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Super-Junction MOSFET robustness assessment and method to improve avalanche capability;Microelectronics Reliability;2024-06

2. The Minimum Specific On-Resistance of 3-D Superjunction Devices;IEEE Transactions on Electron Devices;2023-03

3. Silicon Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

4. 600-V shielded trench split-gate VDMOS improving the figure of merit;International Journal of Electronics;2019-11-20

5. Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes;Chinese Physics B;2018-08

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