The Minimum Specific On-Resistance of 3-D Superjunction Devices-Reference-Cited by-同舟云学术

The Minimum Specific On-Resistance of 3-D Superjunction Devices

Published:2023-03 Issue:3 Volume:70 Page:1206-1210
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Wentong¹^ORCID,Zhang Ke²,Wu Lingying²,Sun Yan³,Guo Xinkai³,Wang Zhuo²^ORCID,Qiao Ming²^ORCID,Li Zhaoji²,Zhang Bo²^ORCID

Affiliation:

1. Shenzhen Institute of Information Technology, Shenzhen, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

3. Institute of Electronic and Information Engineering of UESTC, Guangdong, China

Funder

National Natural Science Foundation of China

National Laboratory of Science and Technology on Analog Integrated Circuit

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10028659.pdf?arnumber=10028659

Reference20 articles.

1. Analytical Design and Experimental Verification of Lateral Superjunction Based on Global Region Normalization Method

2. A High Breakdown Voltage Superjunction MOSFET By Utilizing Double Trench Filling Epitaxy Growth

3. Carrier mobilities in silicon empirically related to doping and field;thomas;Proc IEEE,1967

4. 600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

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