Injection modulation of p + –n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/10/108505/pdf
Reference19 articles.
1. Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor
2. Failure Modes of 15 kV SiC SGTO Thyristors during Repetitive Extreme Pulsed Overcurrent Conditions
3. Progress in High Voltage SiC and GaN Power Switching Devices
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1. Numerical study on light triggering characteristics of NiO/SiC heterojunction thyristor;AIP Advances;2022-12-01
2. Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm2 UV Light;IEEE Electron Device Letters;2020-06
3. Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *;Semiconductor Science and Technology;2020-02-01
4. Improved turn-on characteristics of 4H SiC asymmetrical thyristor with double epitaxial n-base;Superlattices and Microstructures;2019-02
5. Structural, Optical and Electrical Properties of NiO Thin Films Deposited on SiC Substrate by Using a Solution Process;Nanoscience and Nanotechnology Letters;2018-12-01
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